https://www.nature.com/articles/s41467-019-12814-1
http://www.synl.ac.cn/progresscontent.asp?id=204
http://www.synl.ac.cn/progresscontent.asp?id=204
Nature Communications
A vertical silicon-graphene-germanium transistor
Graphene-base transistors were originally proposed for high-frequency applications, but the height of the emitter potential barrier limits the transistor performance towards the THz range. Here, the authors fabricate a vertical silicon-graphene-germanium…
